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Product Datasheet Description Chip Size (um) BVDSS (V) ID(A) rDS(on) (Ω) VTH(V) max Gate Pad (um) Source Pad (um) Package Type
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MS10N60C Pb-free Halide free Active 400V 6A 0.83 4.0 430 * 550 1,000 * 2,000 Wafer
MS10N65C Pb-free Halide free Active 400V 10.5A 0.43 4.0 430 * 510 1,300 * 2,700 Wafer
MS11N40C Pb-free Halide free Active 400V 18A 0.21 4.0 Wafer
MS12N60C Pb-free Halide free Active 500V 5A 1.5 4.0 430 * 550 1,000 * 2,000 Wafer
MS12N65C Pb-free Halide free Active 500V 5A 0.95 4.0 430 * 550 1,000 * 2,000 Wafer
MS13N50C Pb-free Halide free Active 500V 8A 0.85 4.0 430 * 550 1,300 * 2,700 Wafer
MS16N50C Pb-free Halide free Active 500V 9A 0.85 4.0 430 * 550 1,300 * 2,700 Wafer
MS18N40C Pb-free Halide free Active 500V 13A 0.48 4.0 430 * 510 1,300 * 3,800 Wafer
MS18N50C Pb-free Halide free Active 500V 16A 0.38 4.5 430 * 510 1,500 * 3,500 Wafer
MS20N50C Pb-free Halide free Active 500V 18A 0.32 5.0 430 * 550 2,000 * 4,500 Wafer
Custom Range
Custom Range
Custom Range
Custom Range
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